Read-preferred SRAM cell design

ABSTRACT

A read-preferred SRAM cell includes a pull-up MOS device having a first drive current, a pull-down MOS device coupled to the pull-up MOS device, the pull-down MOS device having a second drive current, and a pass-gate MOS device having a third drive current coupled to the pull-up MOS device and the pull-down MOS device. The first drive current and the third drive current preferably have an α ratio of between about 0.5 and about 1. The second drive current and the third drive current preferably have a β ratio of between about 1.45 and 5.

This application claims the benefit of U.S. Provisional Application Ser.No. 60/795,835, filed on Apr. 28, 2006, entitled “Read-Preferred SRAMCell Design,” which application is hereby incorporated herein byreference.

TECHNICAL FIELD

This invention relates generally to semiconductor devices, and moreparticularly to memory cells, and even more particularly to layoutdesign and manufacturing methods of static random access memory cells.

BACKGROUND

Static random access memory (SRAM) is commonly used in integratedcircuits. SRAM cells have the advantageous feature of holding datawithout a need for refreshing. FIG. 1 illustrates an exemplary circuitdiagram of a typical six-MOS device SRAM cell, which includes pass-gateMOS devices 10 and 24, pull-up MOS devices 12 and 16, and pull-down MOSdevices 14 and 18. Gates 2 and 4 of the respective pass-gate MOS devices10 and 24 are controlled by a word-line WL that determines whether thecurrent SRAM cell is selected. A latch formed of pull-up MOS devices 12and 16 and pull-down MOS devices 14 and 18 stores a state. The storedstate can be read through bit lines BL and BLB.

With the scaling of integrated circuits, read and write margins of theSRAM cells are reduced. Reduced read and write margins may cause errorsin respective read and write operations when the read and writeoperations are affected by static noise. Conventionally, to improve theread and write margins, dynamic powers are provided. For example, thewrite margin can be improved by increasing bitline voltage and/orreducing power supply voltage VDD during the write operations, while theread margin can be improved by reducing bitline voltage and/orincreasing power supply voltage VDD during the read operations. However,such a solution suffers drawbacks. Complicated circuits have to bedesigned to provide dynamic power for both read and write operations.Additionally, it takes time for the dynamic powers to be generated, andthus the read and write operations are slowed down.

Accordingly, a new SRAM device, having improved read and write marginswhile at the same time overcoming the deficiency of the prior art, isneeded.

SUMMARY OF THE INVENTION

In accordance with one aspect of the present invention, a read-preferredSRAM cell includes a pull-up MOS device having a first drive current, apull-down MOS device coupled to the pull-up MOS device, the pull-downMOS device having a second drive current, and a pass-gate MOS devicehaving a third drive current coupled to the pull-up MOS device and thepull-down MOS device. The first drive current and the third drivecurrent preferably have an α ratio of between about 0.5 and about 1. Thesecond drive current and the third drive current preferably have a βratio of between about 1.45 and 5.

In accordance with another aspect of the present invention, aread-preferred SRAM cell includes a first pull-up PMOS device, a firstpull-down NMOS device wherein a source of the first pull-up PMOS deviceis electrically coupled to a source of the first pull-down NMOS device,a second pull-up PMOS device electrically coupled to the first pull-upPMOS device and the first pull-down NMOS device, a second pull-down NMOSdevice wherein a source of the second pull-up PMOS device iselectrically coupled to a source of the second pull-down NMOS device.The first and the second pull-up PMOS devices and the first and thesecond pull-down NMOS devices form a latch. The read-preferred SRAM cellfurther includes a pass-gate MOS device electrically coupled to thesource of the first pull-up PMOS device. At least one pair of the firstand the second pull-up PMOS devices and one pair of the first and thesecond pull-down NMOS devices preferably have asymmetric implantationregions.

In accordance with yet another aspect of the present invention, aread-preferred SRAM cell includes at least two pull-up MOS devices, atleast two pull-down MOS devices coupled to the at least two pull-up MOSdevices, and at least two pass-gate MOS devices coupled to the at leasttwo pull-up MOS devices and the at least two pull-down MOS devices. TheSRAM cell preferably has a static read margin and a static write margin,wherein the static read margin is substantially greater than the staticwrite margin.

In accordance with yet another aspect of the present invention, a methodfor operating a static random access memory (SRAM) cell includes forminga SRAM cell having a static read margin and a static write marginwherein the static read margin is substantially greater than the staticwrite margin, providing a dynamic power for write operations of the SRAMcell, and providing a static power for read operations of the SRAM cell.

The advantageous features of the present invention include an improvedread margin, less complicated dynamic power circuits, and a fasteraccess speed for SRAMs.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates a conventional six-MOS device SRAM cell;

FIG. 2 illustrates an eight-MOS device SRAM cell, wherein pull-up andpull-down MOS devices have asymmetric structures;

FIG. 3 illustrates an exemplary embodiment for forming an asymmetric MOSdevice;

FIG. 4 illustrates an eight-MOS device SRAM cell, wherein only pull-upMOS devices have asymmetric structures; and

FIG. 5 illustrates a six-MOS device SRAM cell, wherein pull-up andpull-down MOS devices have asymmetric structures.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

It has been found that the static-noise margin (SNM), which affects bothread margin and write margin, is related to the threshold voltages ofthe NMOS and PMOS devices in SRAM cells. Typically, to increase the SNM,the threshold voltages of the NMOS and PMOS devices need to beincreased. However, the increase in the threshold voltages of PMOS andNMOS devices is limited. The reason is that SRAM cells with MOS deviceshaving too high threshold voltages are difficult to operate, as it ishard to flip the operation of the MOS devices. Additionally, therequirements of the improvement in the read margin and the write marginare typically conflicting. The improvement in the write margin willtypically cause the degradation of the read margin, and vice versa.

In the preferred embodiments of the present invention, SRAM cells with ahigh read margin are formed. The respective SRAM cells are thus referredto as read-preferred SRAM cells. The improvement in the read margin,however, tends to cause a degradation in the write margin. Dynamic poweris thus provided only for write operations to improve the write margin.

FIG. 2 illustrates a circuit diagram of a preferred SRAM cell 20, whichincludes two pull-up PMOS devices PU1 and PU2 and two pull-down NMOSdevices PD1 and PD2. Pull-up PMOS devices PU1 and PU2 and pull-down NMOSdevices PD1 and PD2 are coupled to power supply nodes VDD and VSS. NodeXT, which connects the sources of MOS devices PU1 and PD1, is alsoconnected to a first bitline BA through a pass-gate MOS device PGA, andto a second bitline BB through a pass-gate MOS device PGB, whereinbitlines BA and BB provide different bitline voltages (hence dynamic)for read and write operations. Similarly, node XB, which connects thesources of MOS devices PU2 and PD2, is connected to a first bitline BA′through a pass-gate MOS device PGA′, and to a second bitline BB′ througha pass-gate MOS device PGB′, wherein bitlines BA′ and BB′ providedifferent bitline voltages for read and write operations. Throughout thedescription, the symbol “” is suffixed to a line/node numeral toindicate that a signal/voltage on a line/node has a substantiallyreversed phase with the respective line/node marked without the symbol.

A dynamic power circuit is preferably connected to bitlines BA, BA, BBand BA′. During write operations, the dynamic power circuit providesdynamic power to improve the write margin. During read operations, thedynamic power circuit provides a static power, which is preferably thesame as the operation voltage supply for other circuits on the samechip. The selection of different bitline voltages are performed eitherby setting wordlines WA and WA′ to high and wordlines WB and WB′ to low,or by setting wordlines WB and WB′ to high and wordlines WA and WA′ tolow. For example, during a write operation, the wordlines WA and WA′have high voltages, and thus pass-gate MOS devices PGA and PGA′ areturned on, and the voltages on bitlines BA and BA′ are used for thewrite operation. For read operations, the wordlines WB and WB′ have highvoltages, and thus pass-gate MOS devices PGB and PGB′ are on, and thevoltages on bitlines BB and BB′ are used for the read operations. Inthis example, the magnitude of voltages provided through bitlines BA andBA′ is preferably increased over voltages provided on bitlines BB andBB′. Although not illustrated, the dynamic power circuit may furthersupply dynamic power supply voltages, preferably using MOS devicescontrolled by wordlines WA, WA′, WB and WB′. Contrary to the bitlinevoltages, the power supply voltage for write operations is preferablylower than the power supply voltage for read operations.

Preferably, SRAM cell 20 is designed to be read-preferred by increasingthe α ratio and/or the β ratio. An α ratio is defined as a ratio of thedrive current I_(dsat) of a pull-up MOS device PU1 or PU2 to the drivecurrent I_(dsat) of a pass-gate device PGA, PGB, PGA′ or PGB′. A β ratiois defined as the drive current I_(dsat) of a pull-down MOS device PD1or PD2 to the drive current I_(dsat) of a pass-gate device PGA, PGB,PGA′ or PGB′. Preferably, α ratio is between about 0.5 and 1, and morepreferably between about 0.5 and 0.8, and even more preferably betweenabout 0.6 and about 0.7. Further, α ratio can be even greater than about1, for example, between about 1 and 2. β ratio is preferably betweenabout 1.45 and 5, and more preferably between about 1.6 and 3, and evenmore preferably between about 1.8 and about 2.5. Further, β ratio can beeven greater than about 5, for example, between about 1 and 8.

In a first embodiment, the increase in the α ratio and/or β ratio isachieved by increasing the physical width-to-length ratios (alsoreferred to as W/L ratios) of the pull-down and/or pull-up MOS devices,respectively. In an exemplary embodiment, the W/L ratios of thepull-down MOS devices PD1 and PD2 and the W/L ratios of the pass-gateMOS devices PGA, PGB, PGA′, and/or PGB′ preferably have ratios ofbetween about 1.8 and 5. In another exemplary embodiment formed using 90nm technology, pull-down MOS devices PD1 and PD2 have a gate width ofabout 180 nm and a gate length of about 100 nm, while pass-gate MOSdevices PGA, PGB, PGA′, and PGB′ have a gate width of about 120 nm and agate length of about 115 nm. The resulting W/L ratios of the pull-downMOS devices PD1 and PD2 and the W/L ratios of the pass-gate MOS devicesPGA, PGB, PGA′, and/or PGB′ have α ratio of 1.725.

In a second embodiment, the increase in the α ratio and β ratio isachieved by weakening pass-gate MOS devices PGA, PGB, PGA′, and/or PGB′,and thus reducing their device drive currents. This may be achieved byreducing the W/L ratios of the respective pass-gate MOS devices. Inaddition, weakening the pass-gate MOS devices can be achieved either byskipping process steps commonly used for improving MOS devices, oradopting methods such as forming stressed ILD layer for pass-gate NMOSdevices.

In a third embodiment, the increase in the α ratio and/or β ratio isachieved by forming asymmetric pull-up MOS devices PU1, PU2 and/orpull-down MOS devices PD1 and PD2. Referring back to FIG. 2, shadedrectangles are marked adjacent the source regions of the pull-up andpull-down MOS devices, symbolizing that respective MOS devices areasymmetric MOS devices.

An exemplary embodiment of an asymmetric MOS device 30 is shown in FIG.3. MOS device 30 includes a gate electrode 32 on a gate dielectric 33,gate spacers 35 on sidewalls of the gate electrode 32 and gatedielectric 33, lightly-doped source/drain (LDD) regions 34, and pocketregions 36, 38, 40 and 42 in substrate 44. The illustrated MOS device 30has asymmetric structures on the source side and drain side. Anexemplary formation process is described as follows.

First, semiconductor substrate 44 is provided. A gate structureincluding a gate electrode 32 and a gate dielectric 33 is formed onsemiconductor substrate 44, followed by the implantation of LDD regions34. LDD implantation, which is symbolized by arrows 48, is preferablyperformed at a tilt angle of about 0 degrees (and thus is vertical).Pocket regions 36, 38, 40 and 42, which have an opposite conductivitytype from LDD regions 34, are then implanted. A first pocketimplantation, which is symbolized by arrows 50, forms pocket regions 36and 38. In an exemplary embodiment, the tilt angle γ₁ is about 10degrees, and a twist angle (not shown) is about 0 degrees. The tiltingis preferably from the source side toward the drain side. Due to themasking of gate electrode 32, the resulting source pocket region 36extends under gate electrode 32 further than drain pocket region 38,which may be spaced apart from a respective edge of gate electrode 32. Asecond pocket implantation, which is symbolized by arrows 52, isperformed to form pocket regions 40 and 42. The second pocketimplantation may be performed at, for example, a tilt angle γ₂ of about40 degrees and a twist angle (not shown) of about 45 degrees. Next, gatespacers 35 are formed, and source/drain regions (not shown) are alsoformed. The asymmetric MOS devices have higher device drive currents.Therefore, by forming asymmetric pull-down and/or pull-up MOS devices,the α ratio and/or β ratio is increased. For process convenience, pulldown MOS devices can also have asymmetric structures.

Please note that the above-discussed method for forming asymmetric MOSdevices is only an exemplary embodiment. Different approaches may betaken to form different asymmetric MOS devices in order to improve thedrive currents.

FIG. 4 illustrates another embodiment of the present invention, whereinthe illustrated SRAM cell is similar to what is shown in FIG. 2, exceptthat only pull-up MOS devices PU1 and PU2 are asymmetric, whilepull-down MOS devices PD1 and PD2 are symmetric. In alternativeembodiments (not shown), only pull-down MOS devices PD1 and PD2 areasymmetric, while pull-up MOS devices PU1 and PU2 are symmetric.

In yet other embodiments, the increase in the α ratio and/or β ratio canbe achieved by using other commonly used methods that can improve devicedrive currents. For example, SiGe stressors can be formed for pull-updevices PU1 and PU2 to improve their drive currents, while SiC stressorscan be formed for pull-down devices PD1 and PD2 to improve their drivecurrents. Additional methods for improving α ratio and/or β ratioinclude forming stressed contact etch stop layers for MOS devices.

The SRAM cells formed using the preferred embodiments of the presentinvention are read-preferred, partly because that the SRAM cells have aread margin that is higher than the write margin if no dynamic power isapplied. Throughout the description, the terms “static read margin” and“static write margin” are used to refer to the read margin and writemargin of the SRAM cell assuming no dynamic power is provided. In oneembodiment, the static read margin is preferably greater than the staticwrite margin by about 10 mV to about 200 mV, and more preferably byabout 50 mV. In other embodiments, the static write margin is less thanabout 50 percent, and more preferably less than about 20 percent of thestatic read margin. In yet other embodiments, the static write margin isclose to zero, which means there is no static write margin. Since theimprovement in the static read margin tends to cause a reduction of thestatic write margin, in an exemplary embodiment, the static read marginmay be greater than about 300 mV, while the static write margin is lessthan about 100 mV. By providing dynamic power for writing operations,the write margin (referred to as dynamic write margin hereinafter) ofthe SRAM cells operate under dynamic power can also be improved to adesired level, preferably comparable to the static read margin.

As is commonly known in the art, SRAM cells have many variations, forexample, six MOS devices (6T), 8 MOS device (8T), 12 MOS devices (12T)and 14 MOS devices (14T) are commonly used SRAM structures. Thepreviously provided teaching is readily available for SRAM cells havingdifferent numbers of MOS devices. FIG. 5 illustrates a 6T embodiment,wherein only two pass-gate MOS devices are included in the SRAM cell.Dynamic power for write operations and static power for read operationsare provided through the same bitlines BL and BL′ and voltage supplynode VDD, depending on the operations being performed.

The preferred embodiments of the present invention have severaladvantageous features. First, the SNM of the SRAM cells are improved.Experimental results have shown that by forming asymmetrical pull-up MOSdevices PU1 and PU2 and pull-down devices PD1 and PD2, the SNM in theread operations have been improved by about seven percent. In typicalSRAM operations, the number of read operations exceeds the number ofwrite operations. Without the need of providing dynamic power, readoperations are faster, and the overall speed of the SRAM cells isincreased. A further advantageous feature of the preferred embodimentsof the present invention is that the circuits for providing dynamicpowers are less complicated since only the write operations need dynamicpower.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

1. A semiconductor structure comprising: a static random access memory(SRAM) cell comprising: a pull-up MOS device having a first drivecurrent; a pull-down MOS device coupled to the pull-up MOS device, thepull-down MOS device having a second drive current; and a pass-gate MOSdevice having a third drive current coupled to the pull-up MOS deviceand the pull-down MOS device, wherein the first drive current and thethird drive current have an α ratio of between about 0.5 and about 1,and wherein the second drive current and the third drive current have aβ ratio of between about 1.45 and about 5; and a dynamic power circuitcoupled to the SRAM cell, wherein the dynamic power circuit isconfigured to provide a dynamic bitline voltage for write operations ofthe SRAM cell, and to provide a static bitline voltage for readoperations of the SRAM cell, and wherein the dynamic bitline voltage ishigher than the static bitline voltage.
 2. The semiconductor structureof claim 1, wherein the α ratio is between about 0.6 and about 0.7. 3.The semiconductor structure of claim 1, wherein the β ratio is betweenabout 1.8 and about 2.5.
 4. The semiconductor structure of claim 1,wherein at least one of the pull-up MOS device and the pull-down MOSdevice has an asymmetric structure.
 5. The semiconductor structure ofclaim 1, wherein both the pull-up MOS device and the pull-down MOSdevice have asymmetric structures.
 6. The semiconductor structure ofclaim 1, wherein the pull-down MOS device has a first width-to-length(W/L) ratio, the pass-gate MOS device has a second W/L ratio, andwherein the first W/L ratio and the second W/L ratio have a ratio ofbetween about 1.8 and about
 5. 7. A static random access memory (SRAM)cell comprising: a first pull-up PMOS device; a first pull-down NMOSdevice, wherein a source/drain region of the first pull-up PMOS deviceis electrically coupled to a source/drain region of the first pull-downNMOS device; a second pull-up PMOS device electrically coupled to thefirst pull-up PMOS device and the first pull-down NMOS device; a secondpull-down NMOS device, wherein a source/drain region of the secondpull-up PMOS device is electrically coupled to a source/drain region ofthe second pull-down NMOS device, and wherein the first and the secondpull-up PMOS devices and the first and the second pull-down NMOS devicesform a latch; and a pass-gate MOS device electrically coupled to thesource/drain region of the first pull-up PMOS device, wherein at leastone of the first and the second pull-up PMOS devices and the first andthe second pull-down NMOS devices has asymmetric source and drain pocketregions wherein the asymmetric source and drain pocket regions of thefirst and second pull-up PMOS devices are n-type, and wherein theasymmetric source and drain pocket regions of the first and secondpull-down NMOS devices are p-type; and a dynamic power circuit coupledto the SRAM cell, wherein the dynamic power circuit is configured toprovide a dynamic bitline voltage for write operations of the SRAM celland to provide a static bitline voltage for read operations of the SRAMcell, and wherein the dynamic bitline voltage is higher than the staticbitline voltage.
 8. The SRAM cell of claim 7, wherein an α ratio of theSRAM cell is between about 0.5 and about 1, and wherein a β ratio of theSRAM cell is between about 1.45 and
 5. 9. The SRAM cell of claim 7,wherein each of the first and the second pull-up PMOS devices has theasymmetric source and drain pocket regions.
 10. The SRAM cell of claim7, wherein each of the first and the second pull-down NMOS devices hasthe asymmetric source and drain pocket regions.
 11. The SRAM cell ofclaim 8, wherein each of the first and the second pull-up PMOS devicesand the first and the second pull-down NMOS devices has asymmetricsource and drain pocket regions.
 12. A static random access memory(SRAM) cell comprising: at least two pull-up MOS devices; at least twopull-down MOS devices coupled to the at least two pull-up MOS devices;and at least two pass-gate MOS devices coupled to the at least twopull-up MOS devices and the at least two pull-down MOS devices, whereinthe SRAM cell has a static read margin and a static write margin, andwherein the static read margin is substantially greater than the staticwrite margin a dynamic power circuit coupled to the SRAM cell, whereinthe dynamic power circuit is configured to provide a dynamic bitlinevoltage for write operations of the SRAM cell, and to provide a staticbitline voltage for read operations of the SRAM cell, and wherein thedynamic bitline voltage is higher than the static bitline voltage. 13.The SRAM cell of claim 12, wherein the static read margin is greaterthan the static write margin by about 50 mV.
 14. The SRAM cell of claim12, wherein the static write margin is less than about 50 percent of thestatic read margin.
 15. The SRAM cell of claim 12, wherein the staticwrite margin is less than about 100 mV, and the static read margin isgreater than about 300 mV.
 16. The SRAM cell of claim 15, wherein thestatic write margin is less than about 0 mV.
 17. The SRAM cell of claim12, wherein when operated under a dynamic power, the SRAM cell has adynamic write margin substantially close to the static read margin. 18.The semiconductor structure of claim 1, wherein the SRAM cell has astatic write margin, a static read margin, and a dynamic write marginobtained using the dynamic power circuit, wherein the static writemargin is less than about 50 percent of the static read margin, andwherein the dynamic write margin is comparable to the static readmargin.